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Electron Beam Induced Current in Silicon
Posted 2018年9月6日 GMT-4 05:35 Electromagnetics, Charged Particle Tracing, Semiconductor Devices Version 5.3 0 Replies
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Hello there!
As said in the title, and in relation with the above unanswered article, I am also trying to model an electron beam induced current inside a silicon thin layer (1um). With low energy (500eV), the electrons hit the bulk, maybe creating e-/h+ pairs. Those are drifted apart by two means; the internal doping, and the applied bias (which is necessary for another part of the experiment). The total current is a cumulation of the one from the applied bias, the one induced by the incoming electrons, and the one from the electron-hole pairs creation.
The problem is that I can't seem to find a multiphysics node coupling the (cpt) node with the (semi) node.
- I can't find a way to tell the Si layer to create e-/h+ pairs when an electron hits it
- I can't find a way to make the Si layer absorb the incoming electron flux.
Is there another way to do it? With a mathematical event node?
Please find my file attached. Don't hesitate to ask questions if something is not clear about it.
Jon
Attachments:
Hello Jonathan Thomet
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