Analysis of Stress-induced Pockels Effect in Silicon Waveguides

C. L. Manganelli [1], P. Pintus [1], C. Bonati [2], F. Di Pasquale [1]
[1] Scuola Superiore Sant'Anna, Pisa, Italy
[2] INFN - Sezione di Pisa, Pisa, Italy
发布日期 2015

The recently discovered Pockels effect in strained silicon has made silicon a promising candidate material for optical modulators and switches. In this work, we propose a model that links the electro-optic effect to the applied strain (in fact to the strain gradient). This model may be a big breakthrough in silicon photonic for the optimization of optical devices in the presence of future experimental data.