论文和技术资料

S. Dasgupta [1], K. Ravikumar [1], P. Nenninger [2], F. Gotthardt [2],
[1] ABB, Bangalore, Karnataka, India.
[2] ABB, Gottingen, Germany.

A. Donaldson [1], A. Thimmaiah [2],
[1] Dalhousie University, Halifax, Nova Scotia, Canada
[2] National Institute of Technology Karnataka, Mangalore, Karnataka, India.

C. Hollenbeck [1], Z. Jildeh [1], T. Rydlewski [1], P. Kirchner [1],
[1] Imagine Engineering GmbH, Bergheim, Germany

K.-H. Leitz [1], P. Singer [1], A. Plankensteiner [1], B. Tabernig [1], H. Kestler [1], L. S. Sigl [1],
[1] Plansee SE, Reutte, Austria

I. Tomashchuk [1], I. Bendaoud [1], P. Sallamand [1], E. Cicala [1], S. Lafaye [2], M. Almuneau [2],
[1] Laboratoire Interdisciplinaire Carnot de Bourgogne (ICB), UMR 6303 CNRS - Université de Bourgogne – Franche Comté, France
[2] Laser Rhône-Alpes, Le Fontanil (Grenoble), France

S. A. M. Kirmani [1] , L. Velmanickam [1], D. Nawarathna [1], S. S. Sherif [2], I. T. Lima Jr. [1],
[1] Department of Electrical and Computer Engineering, North Dakota State University, Fargo, ND, USA
[2] Department of Electrical and Computer Engineering, University of Manitoba, Winnipeg, MB, Canada

R. Zecca [1], P. T. Bowen [1], D. R. Smith [1], S. Larouche [1],
[1] Center for Metamaterials and Integrated Plasmonics and Department of Electrical and Computer Engineering, Duke University, Durham, NC, USA

S. Zhuang [1],
[1] CAEaid, Inc., Austin, TX, USA

M. E. Wanas [1], Y. M. Elshazly [1], D. A. ElGayar [1],
[1] Chemical Engineering Department, Faculty of Engineering, University of Alexandria, Alexandria, Egypt

W. Chalgham [1], A. C. Seibi [1], M. Mokhtari [1],
[1] University of Louisiana at Lafayette, Lafayette, LA, USA