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Posted:
7 years ago
2017年9月2日 GMT-4 15:33
I think I can solve this problem now, even though it is not a smart way.
the previous expression:
y-axis: comp1.atxd1(0.107e-6, semi.ot1.dP_dE)
x_axis: hbar_const*comp1.atxd1(0.107e-6, semi.ot1.omega)/e_const
First, we need to integrate the emitting power. But each layer has its own spectrum, so we need to integrate the power separately.
For example, if the range of a quantum well is (0.105e-6, 0.110e-6)
the expression for y-axis should be: integrate(comp1.atxd1(x, semi.ot1.dP_dE), x, 0.105e-6, 0.110e-6)
Now, we get the emitting power from this well. And the corresponding photon energy should be:
hbar_const*comp1.atxd1(0.107e-6, semi.ot1.omega)/e_const
Actually, the value: 0.107e-6 is changeable; any value within (0.105e-6, 0.110e-6) is okay; the material is the same so that the result will not change. In this way, we can get the spectrum of all layers of the device.
So, the expression for each layer now is:
y-axis: integrate(comp1.atxd1(x, semi.ot1.dP_dE), x, left boundary, right boundary)
x_axis: hbar_const*comp1.atxd1(any point within left and right boundary, semi.ot1.omega)/e_const
I export spectrum data of all layers, and combine them together in matlab, and then, I can get the emitting power vs. photon energy(eV) plot for the whole device.
This method can also be applied into 2D model and 3D model, the only difference is:
y-axis: integrate(integrate(comp1.atxd2(x, y semi.ot1.dP_dE), x, left boundary, right boundary), y, lower boundary, upper boundary)
x_axis: hbar_const*comp1.atxd2(any value within left and right, any value within lower and upper, semi.ot1.omega)/e_const
I think I can solve this problem now, even though it is not a smart way.
the previous expression:
y-axis: comp1.atxd1(0.107e-6, semi.ot1.dP_dE)
x_axis: hbar_const*comp1.atxd1(0.107e-6, semi.ot1.omega)/e_const
First, we need to integrate the emitting power. But each layer has its own spectrum, so we need to integrate the power separately.
For example, if the range of a quantum well is (0.105e-6, 0.110e-6)
the expression for y-axis should be: integrate(comp1.atxd1(x, semi.ot1.dP_dE), x, 0.105e-6, 0.110e-6)
Now, we get the emitting power from this well. And the corresponding photon energy should be:
hbar_const*comp1.atxd1(0.107e-6, semi.ot1.omega)/e_const
Actually, the value: 0.107e-6 is changeable; any value within (0.105e-6, 0.110e-6) is okay; the material is the same so that the result will not change. In this way, we can get the spectrum of all layers of the device.
So, the expression for each layer now is:
y-axis: integrate(comp1.atxd1(x, semi.ot1.dP_dE), x, left boundary, right boundary)
x_axis: hbar_const*comp1.atxd1(any point within left and right boundary, semi.ot1.omega)/e_const
I export spectrum data of all layers, and combine them together in matlab, and then, I can get the emitting power vs. photon energy(eV) plot for the whole device.
This method can also be applied into 2D model and 3D model, the only difference is:
y-axis: integrate(integrate(comp1.atxd2(x, y semi.ot1.dP_dE), x, left boundary, right boundary), y, lower boundary, upper boundary)
x_axis: hbar_const*comp1.atxd2(any value within left and right, any value within lower and upper, semi.ot1.omega)/e_const