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Ohmic contact in Semiconductor module
Posted 2023年2月23日 GMT-5 13:13 Semiconductor Devices 1 Reply
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Hi, I am unsure why the ideal ohmic setting for metallic contacts does not consider the difference in chemical potential between the metal and semiconductor. The textbook explains that there is a band bending effect at the metal/semiconductor interface, but the results from the Semiconductor Equilibrium study do not show it.
I would appreciate any suggestions or hints.
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The COMSOL document describes the Ideal Ohmic Contact is used for the case of a highly doped semiconductor with negligible barrier thickness.
Could someone share their experience in modeling the band bending effect in a slightly-doped semiconductor? I am having difficulty understanding how to do it.