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Initial carrier concentration of diode example
Posted 2012年11月13日 GMT-5 09:08 Low-Frequency Electromagnetics Version 4.3 0 Replies
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I'm trying to solve the semiconductor diode example from the model library under no applied bias. I'm only interested in the carrier distribution in equilibrium for now.
1) In the example, the initial carrier concentration for, say, the n-type carriers is n_init and it is applied to both contacts of the diode. Why is this condition applied to *both* sides?
2) The initial concentration of n-type carriers is applied to the whole device. Why is that meaningful? The p-type side has only the intrinsic electrons and so on the order of 10^6 less electrons.
3) I want to define the initial doping similar to the way it is described in a textbook, i.e. a stepwise junction. I use a step-function for this for which I apply a smoothing zone of around 0.2 of the device length. Is this meaningful?
When I solve it, the carrier concentration in the diode becomes uniform (n-type) and non-conclusive (p-type).
I attach my model, I would appreciate any feedback.
Attachments:
Hello Martin Hediger
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