Discussion Forum

I'm relatively new to the Semiconductor module and have been trying to find an extensive manual which steps through all the features, boundary conditions, and initial values in the tool.

I'm setting up a MOSFET design containing SRH recombination and the 4 metal contacts (source, drain, gate, and base). Since this does not operate in the same way as the silicon MOSFET, the creation of a channel relies on polarization of a heteorjunction essentially, extending the relation D=ε0*E+P.

Since this cannot be defined in the Continuity/Heterojunction property, the only way I have found to accomplish this is to enforce the Charge Conservation boundary (Semiconductor -> Electrostatics -> Charge Conservation) and change the Constitutive relation to Polarization. The problem is that by adding a Charge Conservation property, it now renders all of my metal contacts as unapplicable. I have tried enforcing Charge Conservation on all layers as well as only on the layer which is polarized but it still causes this problem.

Has anyone encountered this before? I feel that an extensive overview of the Semiconductor module would clearly demonstrate why this doesn't make sense but at the moment I'm stuck.