Samuel Hartmann, ABB Semiconductors, Switzerland
ABB 半导体借助多物理场仿真延长了绝缘栅双极型晶体管(IGBT)的寿命。IGBT 模块广泛应用于大功率电气系统,长期耐受电、热及机械疲劳。ABB 团队探索了多种键合线与发射极的焊接方式,并借此研究了新型针脚焊接技术能否延长器件寿命。同时,他们还采用全新的焊接技术,在芯片发射极和铝键合线之间增加了应力缓冲层。借助数值仿真,研究人员对导致 IGBT 模块组件性能下降的原因进行了分析,并揭示了改进后的 IGBT 芯片耐用性大幅提升的物理原理。
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