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Add piezo-resistive coefficient in doped channel for MOSFET

Posted 2019年4月18日 GMT-4 12:32 Electromagnetics, Low-Frequency Electromagnetics, Semiconductor Devices Version 5.4 0 Replies

Isha Electrical Engineering/MEMS PhD student
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Hi,

I am simulating the Ids current in a MOSFET. I want to see the Ids current change on application of mechanical stress. For that, I wanted to add the π-44 piezo-resistive coefficient of the doped channel region...

How do I change the property of just that region? And should adding this region property help to see variations in Ids with stress?

Thank you very much..

-------------------
isha3
0 Replies Last Post 2019年4月18日 GMT-4 12:32
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Hello Isha

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