Discussion Forum

Hello,

I've analyzed the si_solar_cell_1d example in the semiconductor modulus documentation and noticed that it enforces the ohmic contact constraint on carrier concentrations Ne and Ph, defining neq and peq as boundaries to represent thermal equilibrium carrier concentrations. However, upon enabling carrier generation, I consistently observed a lower carrier concentration near the boundary compared to the region farther from the boundary, despite the expected increase in carrier concentrations from optical transitions. This raises questions about the accuracy of the boundary condition and, consequently, the validity of the obtained IV curves. Can anyone provide insights into the underlying reasons for this phenomenon. Any feedback or comments would be greatly appreciated.