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Simulating a MOSFET with silicon nitride as gate dielectric, using semiconductor module

Posted 2013年12月3日 GMT-5 06:14 Semiconductor Devices Version 5.2 5 Replies

Soumendu
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Undefined value found.
- Detail: Undefined value found in the equation residual vector.
There are 24 degrees of freedom giving NaN/Inf in the vector for the variable mod1.N.
at coordinates: (5.84978e-005,-3.33333e-009), (5.84931e-005,-6.66667e-009), (5.12993e-005,-6.66667e-009), (5.13039e-005,-3.33333e-009), (5.03756e-005,-6.66667e-009), ...
There are 24 degrees of freedom giving NaN/Inf in the vector for the variable mod1.P.
at coordinates: (5.84978e-005,-3.33333e-009), (5.84931e-005,-6.66667e-009), (5.12993e-005,-6.66667e-009), (5.13039e-005,-3.33333e-009), (5.03756e-005,-6.66667e-009), ...
There are 24 degrees of freedom giving NaN/Inf in the vector for the variable mod1.V.
at coordinates: (5.84978e-005,-3.33333e-009), (5.84931e-005,-6.66667e-009), (5.12993e-005,-6.66667e-009), (5.13039e-005,-3.33333e-009), (5.03756e-005,-6.66667e-009), ...

While trying to simulate a MOSFET with silicon nitride as the gate dielectric layer, I am getting this error message.
What is the problem here and how to solve it?
5 Replies Last Post 2016年12月29日 GMT-5 21:50
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Hello Soumendu

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Anup Kumar
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Posted: 1 decade ago 2014年7月7日 GMT-4 06:30
Hey Soumendu,

I am getting a similar error. Did you come up with solution. I am trying to use SiO2 as insulator but it shows a red cross on Materials and SiO2 in the model builder. While using semiconductor module can we use material other than given in semiconductor material like SiO2 or any metal.

Thanks
-Anup Kumar
Hey Soumendu, I am getting a similar error. Did you come up with solution. I am trying to use SiO2 as insulator but it shows a red cross on Materials and SiO2 in the model builder. While using semiconductor module can we use material other than given in semiconductor material like SiO2 or any metal. Thanks -Anup Kumar
Ekaterina Nekrasova
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Posted: 1 decade ago 2014年8月15日 GMT-4 05:30
Hi, Soumendu
Check mesh in your model (is it too fine?) or maybe this problem is due to missing boundary condition.
Hi, Soumendu Check mesh in your model (is it too fine?) or maybe this problem is due to missing boundary condition.
Ekaterina Nekrasova
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Posted: 1 decade ago 2014年8月15日 GMT-4 06:02
Hi, Anup
If you add Charge Conservation node related to SiO2 domain, red cross will disappear.

In my opinion, when you use Semiconductor Module, COMSOL think that all domains are semiconductors by definition and for this reason COMSOL ask you to define all parameters required by physics (band gap, electron affinity etc.). But you can include insulator in the model by using Charge Conservation feature. As a result you need to specify only relative permittivity to describe SiO2 (actually relative permittivity or polarization or remanent electric displacement - it's your choice in Charge Conservation settings window -> Electric Field)
Hope this helps!
Hi, Anup If you add Charge Conservation node related to SiO2 domain, red cross will disappear. In my opinion, when you use Semiconductor Module, COMSOL think that all domains are semiconductors by definition and for this reason COMSOL ask you to define all parameters required by physics (band gap, electron affinity etc.). But you can include insulator in the model by using Charge Conservation feature. As a result you need to specify only relative permittivity to describe SiO2 (actually relative permittivity or polarization or remanent electric displacement - it's your choice in Charge Conservation settings window -> Electric Field) Hope this helps!
Rahul Changder
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Posted: 9 years ago 2016年2月21日 GMT-5 08:27
I'm trying to simulate MOSFET using explicit SiO2 as gate oxide instead of using thin insulator gate. Although applying charge conservation to SiO2 layer only require dielectric constant of SiO2 to define, but it is not allowing me to use metal contact or terminal on the top surface of SiO2 layer. Also, if I use an extra gate material, it requires all semiconductor parameters, which are not available for metals. So is there any other physics or boundary or domain condition I have to use to simulate?
Please look into it and any suggestion will be highly appreciable.
Thank you,
I'm trying to simulate MOSFET using explicit SiO2 as gate oxide instead of using thin insulator gate. Although applying charge conservation to SiO2 layer only require dielectric constant of SiO2 to define, but it is not allowing me to use metal contact or terminal on the top surface of SiO2 layer. Also, if I use an extra gate material, it requires all semiconductor parameters, which are not available for metals. So is there any other physics or boundary or domain condition I have to use to simulate? Please look into it and any suggestion will be highly appreciable. Thank you,
Vivek Sangwan
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Posted: 8 years ago 2016年12月29日 GMT-5 21:50
Hi,

I'm facing a same problem of metal layers simulation in Semiconductor module.

Have you able to solve it?
Hi, I'm facing a same problem of metal layers simulation in Semiconductor module. Have you able to solve it?

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