Note: This discussion is about an older version of the COMSOL Multiphysics® software. The information provided may be out of date.
Discussion Closed This discussion was created more than 6 months ago and has been closed. To start a new discussion with a link back to this one, click here.
error using SiO2 as dielectric material in mosfet
Posted 2014年7月7日 GMT-4 12:06 Semiconductor Devices Version 4.4 3 Replies
Please login with a confirmed email address before reporting spam
Hi,
I am getting following error when using SiO2 as dielectric material in mosfet.
Undefined value found.
- Detail: Undefined value found in the equation residual vector.
There are 90 degrees of freedom giving NaN/Inf in the vector for the variable comp1.Ne.
at coordinates: (1.11001e-006,9.94028e-007), (1.13e-006,9.94023e-007), (1.15e-006,9.94019e-007), (1.17001e-006,9.94015e-007), (1.19001e-006,9.94007e-007), ...
There are 90 degrees of freedom giving NaN/Inf in the vector for the variable comp1.Ph.
at coordinates: (1.11001e-006,9.94028e-007), (1.13e-006,9.94023e-007), (1.15e-006,9.94019e-007), (1.17001e-006,9.94015e-007), (1.19001e-006,9.94007e-007), ...
There are 90 degrees of freedom giving NaN/Inf in the vector for the variable comp1.V.
at coordinates: (1.11001e-006,9.94028e-007), (1.13e-006,9.94023e-007), (1.15e-006,9.94019e-007), (1.17001e-006,9.94015e-007), (1.19001e-006,9.94007e-007), ...
- Feature: Stationary Solver 1 (sol1/s1)
I got proper results when I used inbuilt 'Thin insulator Gate' but I need to use SiO2 for gate insulator so that further I can transform it into ISFET.
I am getting following error when using SiO2 as dielectric material in mosfet.
Undefined value found.
- Detail: Undefined value found in the equation residual vector.
There are 90 degrees of freedom giving NaN/Inf in the vector for the variable comp1.Ne.
at coordinates: (1.11001e-006,9.94028e-007), (1.13e-006,9.94023e-007), (1.15e-006,9.94019e-007), (1.17001e-006,9.94015e-007), (1.19001e-006,9.94007e-007), ...
There are 90 degrees of freedom giving NaN/Inf in the vector for the variable comp1.Ph.
at coordinates: (1.11001e-006,9.94028e-007), (1.13e-006,9.94023e-007), (1.15e-006,9.94019e-007), (1.17001e-006,9.94015e-007), (1.19001e-006,9.94007e-007), ...
There are 90 degrees of freedom giving NaN/Inf in the vector for the variable comp1.V.
at coordinates: (1.11001e-006,9.94028e-007), (1.13e-006,9.94023e-007), (1.15e-006,9.94019e-007), (1.17001e-006,9.94015e-007), (1.19001e-006,9.94007e-007), ...
- Feature: Stationary Solver 1 (sol1/s1)
I got proper results when I used inbuilt 'Thin insulator Gate' but I need to use SiO2 for gate insulator so that further I can transform it into ISFET.
3 Replies Last Post 2014年7月8日 GMT-4 14:39