Modeling Argon Ion Sputtering on a Silicon Surface
Application ID: 140971
Ion beam etching is a critical technique widely used in semiconductor manufacturing, materials science, and microelectromechanical systems (MEMS). This proof-of-concept model simulates argon ion sputtering of a silicon surface using the Charged Particle Tracing interface. A Deformed Geometry interface is used to capture sputter-driven surface evolution, enabling visualization and analysis of morphology changes.
Check out our accompanying blog post on this model: “Modeling Argon Sputtering on a Silicon Surface”.
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