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AlN/ZnO/Silicon Structure Combining Surface Acoustic Waves And Waveguiding Layer Acoustic Wave

O. Legrani[1], O. Elmazria[1], S. Zhgoon [2], L. Le Brizoual[3], and A. Bartasyte[1]
[1]Institut Jean Lamour, CNRS-Nancy University, Vandoeuvre lès Nancy, France
[2]Moscow Power Engineering Institute, Krasnokazarmennaja, Moscow, Russia
[3]Institut des Matériaux Jean Rouxel, Université Nantes, CNRS, Nantes, France
发布日期 2010

In this work, the theoretical study for the realization of waveguiding layer acoustic waves devices based on AlN/IDT/ZnO/Silicon structure using the modeling software COMSOL Multiphysics (2D) is presented. The effect of thicknesses of AlN and ZnO thin films on the evolution of frequency response, phase velocity and electromechanical coupling is studied. The adequate structure is determined for an experimental investigation.

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