论文和技术资料

Chemical vapor deposition (CVD) is widely used in various fields including the fabrication of electronic devices due to its uniform film formation capability on the large-scale wafers and the minute 3D structures. In CVD, precursors (metal compounds) are commonly reacted in gas-phase as well as on the substrate to yield a film, and thereby it is rather difficult to reveal the reaction mechanism via experiments alone. We therefore applied COMOSOL Multiphysics for Co-CVD, and successfully constructed the quantitative reaction model. Our work enables efficient design of a large-scale reactor and optimization of deposition conditions appropriate for mass-production.