Analysis on Reaction Mechanism and Kinetics of CVD using COMSOL Multiphysics®

Yudai SUZUKI[1]

[1]The University of Tokyo, Tokyo, Japan
发布日期 2013

Chemical vapor deposition (CVD) is widely used in various fields including the fabrication of electronic devices due to its uniform film formation capability on the large-scale wafers and the minute 3D structures. In CVD, precursors (metal compounds) are commonly reacted in gas-phase as well as on the substrate to yield a film, and thereby it is rather difficult to reveal the reaction mechanism via experiments alone. We therefore applied COMOSOL Multiphysics for Co-CVD, and successfully constructed the quantitative reaction model. Our work enables efficient design of a large-scale reactor and optimization of deposition conditions appropriate for mass-production.

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