技术资料
白皮书和应用说明
Dynamic Simulation of Electrochemical Etching of Silicon with COMSOL
发布日期 2012
In the presented work the dynamic simulation of a silicon anodization process is performed. Two mechanisms of etch form development (diffusion in electrolyte, current flow) are considered and simulated. Influence of electrolyte conductivity and radius of the opening in the masking layer is discussed.
下载
- ivanov_presentation.pdf - 1.34MB
- ivanov_poster.pdf - 0.88MB
- ivanov_paper.pdf - 1.43MB
- ivanov_abstract.pdf - 0.29MB