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Stochastic Approach in Approximation of the Transient Plasma Sheath Behavior in FEM
发布日期 2008
Recently, the advanced plasma tools have been using very high frequency power sources (>100 MHz) and their combination to excite plasma utilized in semiconductor technology. This approach is evoking the regimes that are less understood and currently a subject to many studies and experimental investigations.
The paper describes quasi-stochastic approach applied for sheath properties and used in dual frequency (f1>>f2 ) capacitively coupled plasma transient simulations. The initial phase of these modeling activities and investigations shown a good numerical stability of a computational scheme. The validation of a proposed numerical model and its equivalence to full transient solution are discussed.
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