Menu

论文和技术资料

快速搜索

技术资料
白皮书和应用说明

Stress State Determination in Nanoelectronic Silicon Devices Coupling COMSOL Multiphysics and a Recursive Dynamical CBED Pattern Simulation

A. Spessot[1,2], S. Frabboni[1], A. Armigliato[3], and R. Balboni[3]
[1]Numonyx Advanced R&D NVMTD-FTM, Agrate Brianza, Italy
[2]National Research Center S3, CNR-INFM and Department of Physics, University of Modena e Reggio Emilia, Modena, Italy
[3]CNR-IMM Section of Bologna, Italy
发布日期 2008

Strained technology is being promoted as the best way to extend the performance of semiconductor transistors. An inhomogeneous layer deposited on top of a silicon device can induce a strong modification in the real silicon strain state, and consequently in its electronic performance. Coupling the finite elements analysis done by COMSOL with a recursive CBED and LACBED dynamical simulation, we are able to explain the observed diffraction pattern modification, reconstructing the strain field in the device.

下载