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Electron Trajectories in Scanning Field-Emission Microscopy

H. Cabrera [1],
[1] Swiss Federal Institute of Technology, Zurich, Switzerland

The Scanning Field Emission Microscopy (SFEM) is a novel technology similar to the better known Scanning ... 扩展阅读

Non-linear DC Electrophoresis in High Electric Field Conditions

E. Ruiz-Reina [1], F. Carrique [1],
[1] University of Málaga, Málaga, Spain

Very recently, the synthesis and experimental study of a new class of highly charged polymer particles has ... 扩展阅读

Designing B-field Coils from the Inside-Out

C.B. Crawford[1], Y. Shin[1], and G. Porter[1]
[1]Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky, USA

Traditionally the design cycle for magnetic fields involves guessing at a reasonable conductor / magnetic ... 扩展阅读

Nanofluidic Analyte Preconcentration Using Fluid Field-Effect Diodes

A. Eden [1], K. Scida [1], J. C. T. Eijkel [2], C. D. Meinhart [1], S. Pennathur [1],
[1] University of California, Santa Barbara, CA, USA
[2] University of Twente, Enschede, Netherlands

Introduction Throughout the field of micro- and nanoscale electrokinetics, floating bipolar electrodes ... 扩展阅读

Increasing Dust Removal Efficiency of Electrodynamic Screens Using Frequency Optimization via COMSOL Multiphysics®

C. Morales [1], R. Eriksen [1], M. Horenstein [1], M. Mazumder [1],
[1] Boston University, Boston, MA, USA

Utility-scale photovoltaic (PV) and concentrated solar power (CSP) generation facilities are located in ... 扩展阅读

Simulation of Silicon Nanodevices at Cryogenic Temperatures for Quantum Computing

F. A. Mohiyaddin [1], F. G. Curtis [1], M. N. Ericson [1], T. S. Humble [1],
[1] Quantum Computing Institute, Oak Ridge National Laboratory, Oak Ridge, TN, USA

Electronic devices operating at cryogenic temperatures are critical for a wide variety of applications ... 扩展阅读

Comprehensive Numerical Modeling of Filamentary RRAM Device

D. Niraula [1], V. Karpov [1],
[1] University of Toledo, Toledo, OH, USA

Resistive random-access memory (RRAM) is a non-volatile memory that operates via resistive switching between ... 扩展阅读

Three-Dimensional Modeling of Electrical Scanning Probe Microscopy Problems

G. Gomila [1], L. Fumagalli [2], R. Fabregas [3],
[1] Institut de Bioenginyeria de Catalunya (IBEC), Departament d’Electrònica, Universitat de Barcelona, Barcelona, Spain
[2] School of Physics and Astronomy, University of Manchester, Manchester, United Kingdom
[3] Institut de Bioenginyeria de Catalunya (IBEC), Universitat de Barcelona, Barcelona, Spain

Electrical scanning probe microscopy (SPM) techniques, such as electrostatic force microscopy, nanoscale ... 扩展阅读

Influence of a Porous Corrosion Product Layer on the Corrosion Phenomenon of Carbon Steel Pipelines

M. Mohamed-Saïd [1], P. Namy [1],
[1] SIMTEC, Grenoble, France

Assessing the severity of the internal corrosion of structures is of paramount importance in the oil & ... 扩展阅读

Numerical Modeling of Resistive Switching in a RRAM Device

D. Niraula [1], V. Karpov [1],
[1] University of Toledo, Toledo, OH, USA

A new nonvolatile memory device based on its resistance state has emerged known as resistive random access ... 扩展阅读

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