论文和技术资料

Electron-optical system (EOS) design for lithography provides the inherent advantage of higher resolution and maskless operation relative to optical technology. The use of multiple electron beams yields higher throughput, albeit with greater complexity in focusing, relative to the single beam. The primary goal of this work is to develop equipment, process, and software technologies for MEMS-based maskless e-beam exposure systems. A new EOS design methodology is proposed which directly incorporates lithography patterning fidelity (PF) metrics into the optimization flow.