Semiconductor

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半导体模块
波动光学模块
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Physics Interfaces and Study Types
ExpandSchrödinger Equation
ExpandSemiconductor
Material Library
Aluminium Gallium Arsenide
Diamond
Gallium Antimonide
Gallium Arsenide
Gallium Nitride
Gallium Phosphide
Germanium
Indium Antimonide
Indium Arsenide
Indium Phosphide
Silicon
Predefined Multiphysics Interfaces
ExpandSchrödinger-Poisson Equation
ExpandSemiconductor Optoelectronics, Beam Envelopes1
ExpandSemiconductor Optoelectronics, Frequency Domain1
Schrödinger Equation Boundary Conditions
Zero Flux
Zero Probability
ExpandOpen Boundary
ExpandPeriodic Condition
Schrödinger Equation Volumetric Domain Properties
Dissipation
Effective Mass
Electron Potential Energy
Lorentz Force
Rotating Frame
Semiconductor Boundary Conditions
Surface Charge Density
Thin Insulator Gate
ExpandContinuity/Heterojunction
ExpandElectrostatics Boundary Conditions
ExpandInsulation
ExpandInsulator Interface
ExpandMetal Contact
ExpandTrap-Assisted Heterointerface Recombination
ExpandTrap-Assisted Surface Recombination
Semiconductor Carrier Statistics
Fermi-Dirac
Maxwell-Boltzmann
Semiconductor Discretization
Density Gradient
Finite Element
Finite Element (Log Equation Formulation)
Finite Volume
Quasi Fermi Level
Semiconductor Volumetric Domain Properties
ExpandElectrostatics Domain Properties
ExpandSemiconductor Material Model
Doping
ExpandAnalytic Doping Model
ExpandGeometric Doping Model
Generation-Recombination
Auger Recombination
Direct Recombination
Impact Ionization Generation
User-Defined Generation
User-Defined Recombination
ExpandTrap-Assisted Recombination
Mobility Models
Arora Mobility Model
Caughey-Thomas Mobility Model
Fletcher Mobility Model
Klaassen Unified Mobility Model
Lombardi Surface Mobility Model
Power Law Mobility Model
User Defined Mobility Model
Optoelectronics
ExpandIndirect Optical Transitions
ExpandOptical Transitions
Trap Density
ExpandAnalytic Trap Density
ExpandGeometric Trap Density
  1. Requires all indicated products