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MOSFET 击穿

Application ID: 15583


本例显示如何使用瞬态求解器来模拟一个 MOSFET 在碰撞电离作用下击穿。一般情况下,MOSFET 通常在一个给定的门电压的汲-源电压的三个范围内工作。刚开始时,电流-电压是线性关系,这是欧姆区;随着汲-源电压的增加,汲取电流开始饱和,这是饱和区;当汲-源电压继续上升达到击穿范围时,电流随着电压变为指数关系。这是由碰撞电离导致的。

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半导体模块

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