Semiconductor

Expand/Collapse all
半导体模块
波动光学模块
Select any check box to highlight individual products:
Physics Interfaces and Study Types
ExpandSchrödinger Equation
ExpandSemiconductor
Material Library
Aluminium Gallium Arsenide
Diamond
Gallium Antimonide
Gallium Arsenide
Gallium Nitride
Gallium Phosphide
Germanium
Indium Antimonide
Indium Arsenide
Indium Phosphide
Silicon
Predefined Multiphysics Interfaces
ExpandSemiconductor Optoelectronics, Beam Envelopes1
ExpandSemiconductor Optoelectronics, Frequency Domain1
Schrödinger Equation Boundary Conditions
Zero Flux
Zero Probability
ExpandOpen Boundary
ExpandPeriodic Condition
Schrödinger Equation Volumetric Domain Properties
Effective Mass
Electron Potential Energy
Semiconductor Boundary Conditions
Surface Charge Density
Thin Insulator Gate
ExpandContinuity/Heterojunction
ExpandElectrostatics Boundary Conditions
ExpandInsulation
ExpandInsulator Interface
ExpandMetal Contact
Semiconductor Carrier Statistics
Fermi-Dirac
Maxwell-Boltzmann
Semiconductor Discretization
Finite Element
Finite Element (Log Equation Formulation)
Finite Volume
Semiconductor Volumetric Domain Properties
ExpandElectrostatics Domain Properties
ExpandSemiconductor Material Model
Doping
ExpandAnalytic Doping Model
ExpandGeometric Doping Model
Generation-Recombination
Auger Recombination
Direct Recombination
Impact Ionization Generation
Shockley-Read-Hall Recombination
User-Defined Generation
User-Defined Recombination
Mobility Models
Arora Mobility Model
Caughey-Thomas Mobility Model
Fletcher Mobility Model
Lombardi Surface Mobility Model
Power Law Mobility Model
User Defined Mobility Model
Optoelectronics
ExpandIndirect Optical Transitions
ExpandOptical Transitions
Trap Density
ExpandAnalytic Trap Density
ExpandGeometric Trap Density
  1. Requires all indicated products