高功率 IGBT 模块的热分析
Application ID: 121521
This industrial-scale proof of concept (POC) model demonstrates how to perform an electric-thermal analysis of a high-power insulated-gate bipolar transistor module (IGBT module). The module has a rated voltage of 1200 V, and nominal current of 1800 A.
Using a stationary study the device is modeled in the 'on' state, where strong currents pass through the IGBT dies and only a small portion of the current is leaking back through the freewheeling diodes (FWDs). The generated heat is dissipated through a heat sink, and both the currents and the temperature profile are evaluated in the semiconductors, the metallization layers, and the bond wires.
The model uses the Joule Heating multiphysics interface, that combines Electric Currents and Heat Transfer in Solids, together with the Electromagnetic Heating multiphysics coupling. The electric properties of the semiconductor material have been included as a macroscopic effect: an effective conductivity is applied such that the potential drop across the junction agrees with a predetermined (temperature dependent) value.
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