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COMSOL Multiphysics 案例库模型来自广泛的应用领域,包括电气、机械、流体和化工等行业。您可以下载现成即可使用的模型,以及详细的建模步骤说明,作为您建模工作的起点。请使用“快速搜索”查找与您的专业领域相关的模型,并登录或创建一个与有效的 COMSOL 许可证相关联的 COMSOL Access 帐户,下载模型文件。

InGaN/AlGaN Double Heterostructure LED

This model simulates a GaN based light emitting diode device. The emission intensity, spectrum, and efficiency are calculated as a function of the driving current. Direct radiative recombination across the bandgap is modeled, as well as non-radiative Auger and Trap-Assisted Scattering processes. This results in a sub-linear increase in emission intensity with increasing current, which is a common ...

DC Characteristics of a MOS Transistor (MOSFET)

This model calculates the DC characteristics of a simple MOSFET. The drain current versus gate voltage characteristics are first computed in order to determine the threshold voltage for the device. Then the drain current vs drain voltage characteristics are computed for several gate voltages. The linear and saturation regions for the device can be identified from these plots.

3D Analysis of a Bipolar Transistor

This model shows how to set up a 3D simulation of a n-p-n bipolar transistor. It is a 3D version of the device shown in the Bipolar Transistor model, and demonstrates how to extend semiconductor modeling into 3D using COMSOL Multiphysics. As in the 2D version of this model, the device is simulated whilst operating in the common-emitter regime. A voltage driven study is computed to characterize ...

Heterojunction 1D

This one-dimensional model simulates three different heterojunction configurations under forward and reverse bias. The model shows the difference in using the continuous quasi-Fermi levels model as opposed to the thermionic emission model to determine the current transfer occurring between the different materials creating the junction under bias. The energy levels obtained with the model are then ...

Surface Trapping in a Silicon Nanowire Gate-All-Around Device

A gate-all-around MOSFET consists of a nanowire with a gate electrode wrapped around the circumference. Since the entire nanowire forms the channel, this configuration provides the best possible electrostatic control of the channel and offers a good candidate for the miniaturization of MOSFETs. This model analyzes a silicon nanowire gate-all-around device, with different trap densities at the ...

PN-Junction 1D

This simple benchmark model computes the potential and carrier concentrations for a one-dimensional p-n junction using both the finite element and finite volume methods. The results are compared with an equivalent device from the book, "Semiconductor Devices: A Simulation Approach," by Kramer and Hitchon.

PN-Diode Circuit

This model extracts spice parameters for a silicon p-n junction diode. The spice parameters are used to create a lumped-element equivalent circuit model of a half-wave rectifier that is compared to a full device level simulation. In this example, a device model is made by connecting a 2D meshed p-n junction diode to a circuit containing a sinusoidal source, a resistor and a ground to form a basic ...

Bipolar Transistor

This model shows how to set up a simple Bipolar Transistor model. The output current-voltage characteristics in the common-emitter configuration are computed and the common-emitter current gain is determined.

Breakdown in a MOSFET

MOSFETs typically operate in three regimes depending on the drain-source voltage for a given gate voltage. Initially the current-voltage relation is linear, this is the Ohmic region. As the drain-source voltage increases the extracted current begins to saturate, this is the saturation region. As the drain-source voltage is further increased the breakdown region is entered, where the current ...

GaAs PIN Photodiode

This simple model demonstrates how to use the Semiconductor Optoelectronics interfaces to model a simple GaAs PIN diode structure. Both the stimulated and spontaneous emission in the semiconductor are accounted for. The corresponding adsorption of the light and the associated change in the complex refractive index are included in a self consistent manner.

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